GROWTH OF ZNS, CDS AND MULTILAYER ZNS CDS THIN-FILMS BY SILAR TECHNIQUE/

Citation
Mp. Valkonen et al., GROWTH OF ZNS, CDS AND MULTILAYER ZNS CDS THIN-FILMS BY SILAR TECHNIQUE/, Applied surface science, 115(4), 1997, pp. 386-392
Citations number
23
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
115
Issue
4
Year of publication
1997
Pages
386 - 392
Database
ISI
SICI code
0169-4332(1997)115:4<386:GOZCAM>2.0.ZU;2-N
Abstract
Successive ionic laver adsorption and reaction (SILAR) technique was u sed to deposit cadmium sulfide (CdS) and zinc sulfide (ZnS) thin films on (100)GaAs. CdS thin films were also grown on ITO-covered glass sub strates, Multilayer CdS/ZnS thin films were deposited on glass substra tes. The crystallinity of the thin films was characterized by means of X-ray diffraction and they all turned out to be polycrystalline. The thin films looked relatively smooth and homogeneous in scanning electr on microscopy (SEM) images. Energy dispersive X-ray analysis (EDX) and Rutherford backscattering spectroscopy (RBS) proved nearly 1:1 stoich iometry for the multilayer samples. Thickness of the thin films was me asured by RBS and chemical analysis. (C) 1997 Elsevier Science B.V.