Successive ionic laver adsorption and reaction (SILAR) technique was u
sed to deposit cadmium sulfide (CdS) and zinc sulfide (ZnS) thin films
on (100)GaAs. CdS thin films were also grown on ITO-covered glass sub
strates, Multilayer CdS/ZnS thin films were deposited on glass substra
tes. The crystallinity of the thin films was characterized by means of
X-ray diffraction and they all turned out to be polycrystalline. The
thin films looked relatively smooth and homogeneous in scanning electr
on microscopy (SEM) images. Energy dispersive X-ray analysis (EDX) and
Rutherford backscattering spectroscopy (RBS) proved nearly 1:1 stoich
iometry for the multilayer samples. Thickness of the thin films was me
asured by RBS and chemical analysis. (C) 1997 Elsevier Science B.V.