SCANNING TUNNELING SPECTROSCOPY OF INDIUM TIN OXIDE FILM IN AIR

Authors
KASIVISWANATHAN S SRINIVAS V KAR AK MATHUR BK CHOPRA KL
Citation
S. Kasiviswanathan et al., SCANNING TUNNELING SPECTROSCOPY OF INDIUM TIN OXIDE FILM IN AIR, Applied surface science, 115(4), 1997, pp. 399-401
Citations number
18
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
115
Issue
4
Year of publication
1997
Pages
399 - 401
Database
ISI
SICI code
0169-4332(1997)115:4<399:STSOIT>2.0.ZU;2-6
Abstract
Scanning tunneling spectroscopy investigations have been carried out o n electron beam deposited indium tin oxide films in air. The spectrosc opic data exhibit characteristics typical of metal-insulator-semicondu ctor structure, with a heavily doped semiconductor. The measurements h ave yielded a band gap of about 3.5 eV, which is very close to the bul k value. (C) 1997 Elsevier Science B.V.