Investigations of chemical vapor deposition of GaN using synchrotron radiation

We apply synchrotron X-ray analysis techniques to probe the surface structu re of GaN films during synthesis by metallorganic chemical vapor deposition (MOCVD). Our approach is to observe the evolution of surface structure and morphology in real-time using grazing incidence X-ray scattering (GIXS). T his technique combines the ability of X-rays to penetrate the chemical vapo r deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. Examples are presented from some of our stu dies of growth modes and surface evolution as a function of process conditi ons that illustrate the capabilities of synchrotron X-ray analysis during M OCVD growth. We focus on studies of the homoepitaxial growth mode, island c oarsening dynamics, and effects of impurities. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1366623] All rights reserved.