The interdiffusion of Sn from AuSn solder with the barrier metal depositedon diamond

The metallization of diamond by ion beam assisted deposition (IBAD) and sub sequent sputter deposition was investigated. IBAD was adopted to prepare th ree metallization schemes for diamond substrates, i.e., Ti/Ni, Ti/Cr and T/ W. A AuSn solder layer was deposited onto these systems using a sputtering technique. Metallization samples were subsequently furnace annealed. Charac terization of the multi-layered films was performed using Rutherford backsc attering spectrometry. The results showed that the diamond/Ti/Ni/AuSn and d iamond/Ti/W/AuSn systems exhibit poorer thermal stability owing to Sn from AuSn solder reacting with the barrier metal during annealing. However, the diamond/Ti/Cr/AuSn structure appeared to be stable during annealing. (C) 20 01 Elsevier Science Ltd. All rights reserved.