Ion implantation into GaN

The current status of ion beam processing of GaN is reviewed. In particular , we discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amo rphous GaN due to material dissociation, (iv) anomalous surface erosion dur ing ion bombardment at elevated temperatures, (v) the effect of implantatio n disorder on mechanical properties, (vi) current progress on annealing of implantation disorder, (vii) electrical and optical doping, and (viii) elec trical isolation. Emphasis is given to current problems which may hinder a successful application of ion implantation in the fabrication of GaN-based devices. (C) 2001 Elsevier Science B.V. All rights reserved.