In situ interface characterization of silicon surface in fluoride media

The porous Si/HF-electrolyte junction has been studied by: capacitance (C)- voltage (V) and current (I)-voltage (V) measurements. The observed current under forward bias shows an exponential increase like a Schottky diode with two oscillations around 1.0 and 2.4 V (SCE!, respectively, whereas the rev erse bias current shows negligible contribution. The low-frequency capacita nce spectrum exhibits a peak structure in forward bias regime, which can be ascribed to the charge trapping/detrapping at Fermi level of porous Si und er forward bias. The potential and charge distribution for a p-semiconducto r/electrolyte junction is discussed (C) 2001 Elsevier Science B.V. All righ ts reserved.