Citation
Sb. Aldabergenova et al., Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si : H films, MAT SCI E B, 81(1-3), 2001, pp. 29-31
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
29 - 31
Database
ISI
SICI code
0921-5107(20010424)81:1-3<29:MOOEEI>2.0.ZU;2-S
Abstract
ErO6 complexes, where every Er3+ ion is surrounded by six oxygen atoms form
ing an octahedron with C-3v point symmetry are found to explain the strong
Stark splitting of the characteristic Er3+ emission observed in the 1460-16
10 nm range. An a-Si:H matrix serves as an ideal semiconductor host to perm
it co-doped O atoms to form an optimal ligand field around Er3+ ions. (C) 2
001 Elsevier Science B.V. All rights reserved.