Stimulated emission in erbium-doped silicon structures under optical pumping

Authors
Bresler, MS Gusev, OB Terukov, EI Yassievich, IN Zakharchenya, BP Emel'yanov, VI Kamenev, BV Kashkarov, PK Konstantinova, EA Timoshenko, VY
Citation
Ms. Bresler et al., Stimulated emission in erbium-doped silicon structures under optical pumping, MAT SCI E B, 81(1-3), 2001, pp. 52-55
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
52 - 55
Database
ISI
SICI code
0921-5107(20010424)81:1-3<52:SEIESS>2.0.ZU;2-C
Abstract
Stimulated emission of erbium ions inserted in the matrix of amorphous hydr ogenated silicon was first observed under optical pumping. A 'homogeneous' model of lasing in such structure was developed taking into account the sat uration of the active medium. It is demonstrated that the generation regime is possible only in the case when the concentration of optically active er bium ions in the medium exceeds some threshold value determined by losses i n the resonator. (C) 2001 Elsevier Science B.V. All rights reserved.