Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon

Authors
Emtsev, VV Poloskin, DS Shek, EI Sobolev, NA Kimerling, LC
Citation
Vv. Emtsev et al., Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon, MAT SCI E B, 81(1-3), 2001, pp. 74-76
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
74 - 76
Database
ISI
SICI code
0921-5107(20010424)81:1-3<74:EOOCOT>2.0.ZU;2-Q
Abstract
Three kinds of dominating donor centers formed in erbium-implanted silicon due to postimglantation annealing iu the range from T = 700 to 900 degreesC are studied. Shallow donors with ionization energies between 20 and 40 meV are attributed to electrically active oxygen aggregates with the involveme nt of intrinsic defects. Two Other kinds of donors at approximate to E-C-70 and -120 meV are identified as [Er-O] complexes. The latter donors undergo modifications at T = 800 degreesC. As a result, donor centers at approxima te to E-C-150 meV are formed. New donors at approximate to EC-100 meV also make their appearance after annealing to T = 900 degreesC. (C) 2001 Elsevie r Science B.V. All rights reserved.