High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon

High resolution Laplace Deep Level Transient Spectroscopy (LDLTS) has been applied to n and p type silicon implanted with low doses of either erbium o r silicon, and spectra are compared to those from electron irradiated silic on. Hydrogen has been introduced by wet chemical etching. Prior to annealin g n-type electron irradiated Si exhibits the deep level VOH at E-C - 311 me V, but in the ion implanted n-type Si this peak is largely obscured in DLTS by a defect peak at E-C - 400 meV. LDLTS overcomes this problem and shows that VOH is present in the n-type Si implanted Si, but not in Er implanted Si. In the Er implanted samples, defect migration is occurring beyond the i mplanted ion range, and in the p-type Er implanted Si hydrogen passivates t he divacancy and the C1O1 defect. The passivation of the latter state is no t stable, and the C1O1 deep state starts to re-appear after a 1 h anneal at 320 K. (C) 2001 Elsevier Science B.V. All rights reserved.