Mid-infrared induced quenching of photoluminescence in Si : Er

Authors
Forcales, M Bradley, IV Wells, JPR Gregorkiewicz, T
Citation
M. Forcales et al., Mid-infrared induced quenching of photoluminescence in Si : Er, MAT SCI E B, 81(1-3), 2001, pp. 80-82
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
80 - 82
Database
ISI
SICI code
0921-5107(20010424)81:1-3<80:MIQOPI>2.0.ZU;2-V
Abstract
The recently reported effect of luminescence quenching by a mid-infrared (M IR) pulse from a free-electron laser was investigated in various Si:Er mate rials. No quenching was observed in Si:Er samples whose photoluminescence s pectra were dominated by the so-called 'cubic' centers. Furthermore, in add ition to the low-symmetry Er-related spectra, the MIR-induced quenching was found to take place also for a broad emission band centered around 1.4 mum , and usually assigned to implantation damage. The band-edge excitonic emis sion remained unaffected by the MIR radiation. (C) 2001 Elsevier Science B. V. All rights reserved.