Range of ion-implanted rare earth elements in Si and SiO2

The rare earth elements Er and Yb were ion implanted into Si and SiO2 with energies between 300 and 800 keV and doses between 10(14) and 10(15) cm(-2) . The range distributions were measured with secondary ion mass spectrometr y (SIMS). It is found that the experimental range is about 20% larger and t he width is up to 50% larger than Values obtained by simulations with the T RIM code. Simulations with the Monte Carlo code IMSIL show that the distrib utions can be fitted by both reducing the electronic stopping power and mod ifying the universal potential for nuclear stopping. (C) 2001 Elsevier Scie nce B.V. All rights reserved.