Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

Selectively excited photoluminescence (PL) spectroscopy has been carried ou t on the similar to 1540 nm I-4(13:2) to I-4(15:2) emissions of the multipl e Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at tempera tures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL sp ectra selectively excited by below-gap light demonstrate different quenchin g rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room t emperature. above-gap-pumped Er3+ PL spectrum. In addition, selective PL sp ectroscopy has been carried out on the Er3+ emission in Er-implanted undope d and Mg-doped GaN at temperatures ranging from 6 to 295 R. The results ind icate that the previously reported enhancement of the violet-pumped centers ' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature. (C) 2001 Elsevier science B.V. Al l rights reserved.