Excitation of Er3+ ions in mixed amorphous-nanocrystalline GaN : Er films

Authors
Aldabergenova, SB Albrecht, M Strunk, HP Viner, J Taylor, PC Andreev, AA
Citation
Sb. Aldabergenova et al., Excitation of Er3+ ions in mixed amorphous-nanocrystalline GaN : Er films, MAT SCI E B, 81(1-3), 2001, pp. 144-146
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
144 - 146
Database
ISI
SICI code
0921-5107(20010424)81:1-3<144:EOEIIM>2.0.ZU;2-V
Abstract
We relate the strong enhancement of the Er3+ emission in amorphous + nanocr ystalline GaN thin films alter annealing at 750 degreesC with changes in th e microstructure and respective changes in the electronic system. We use hi gh, resolution transmission electron microscopy (HRTEM), photothermal defle ction spectroscopy and photoluminescence excitation measurements before and after annealing. The main results concern distinct resonant absorption ban ds of the Er3+ ions superimposed on a broad background absorption from the amorphous matrix and very marked Stark splitting of the F-4(9 2) absorption peak after optimal annealing. (C) 2001 Elsevier Science B.V. All rights re served.