Photoluminescence of ytterbium doped amorphous silicon and silicon carbide

Authors
Terukov, EI Kudoyarova, VK Kuznetsov, AN Koughia, KV Weiser, G Kuehne, H
Citation
Ei. Terukov et al., Photoluminescence of ytterbium doped amorphous silicon and silicon carbide, MAT SCI E B, 81(1-3), 2001, pp. 161-163
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
81
Issue
1-3
Year of publication
2001
Pages
161 - 163
Database
ISI
SICI code
0921-5107(20010424)81:1-3<161:POYDAS>2.0.ZU;2-2
Abstract
The rare earth doped samples of a-Si:H and a-Si:C:H were produced by magnet ron assisted silane decomposition (MASD) technique. Two mechanisms of energ y transfer from host material to embedded rare earth ions are possible in a morphous silicon based alloys depending on the material composition and ion properties. The PL intensity of specific ions and the PL temperature depen dence may be effectively varied by the appropriate choice of alloy composit ion. (C) 2001 Elsevier Science B.V. All rights reserved.