Holmium-related luminescence in crystalline silicon

The influence of annealing temperature of Si:Ho:O structures prepared by so lid phase epitaxial technique on the photoluminescence spectra at 4.2 R was studied. The ions of Ho at 1 MeV energy and 1 x 10(14) cm(-2) dose and O a t 0.14 MeV and 1 x 10(15) cm(-2) were implanted in p-Cz-Si. A fine structur e of Ho-related light-emitting centers was measured with a resolution of up to 1 cm-l in the range 3000-12 000 cm(-1). A variation of He-related lumin escence intensity in dependence on the annealing temperature is due to the transformation of the centers. Several He-related centers with sharp and wi de lines are observed. We believe that the Ho3+ ions in the centers with th e sharp and nide lines have a different surrounding - oxygen atom(s) and gl ass-like shell in their neighborhood, respectively. (C) 2001 Elsevier Scien ce B.V. All rights reserved.