Optical and photocurrent spectroscopy studies of inter- and intra-band transitions in size-tailored InAs/GaAs quantum dots

Combined inter- and intra-band spectroscopy studies are presented on struct urally well-characterized InAs/GaAs(001) self-assembled quantum dots grown via conventional continuous deposition and the innovative punctuated island growth approach. Temperature and power dependent photoluminescence (PL) an d PL Excitation (PLE) on these remarkably uniform quantum dot based samples (with typical PL linewidth approximate to 25 meV). reveal details of size- dependent electronic structure. These studies are complemented with systema tic near- and middle-infrared photocurrent spectroscopy for interband throu gh electron intra-band transitions as a function of temperature and applied electric field.