Gain characteristics of self-assembled InAs/GaAs quantum dots

Authors
Arzberger, M Bohm, G Amann, MC Abstreiter, G
Citation
M. Arzberger et al., Gain characteristics of self-assembled InAs/GaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 827-831
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
3
Year of publication
2001
Pages
827 - 831
Database
ISI
SICI code
0370-1972(200104)224:3<827:GCOSIQ>2.0.ZU;2-W
Abstract
The gain characteristics of stacked self-assembled InAs/GaAs quantum dots ( QDs) with an inhomogeneous broadening of the order of 100 meV are studied i n comparison to an InGaAs quantum well. The QDs exhibit gain already at low current densities of similar to 25 Acm(-2) per QD layer! but the peak gain rises slowly with increasing current density The energy of the peak gain i s shifted from the low energy tail of the QD emission at low injection towa rds the wetting-layer at high injection.