Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots

Authors
Weber, A Goede, K Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Ledentsov, NN Kopev, PS Alferov, ZI
Citation
A. Weber et al., Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 833-837
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
3
Year of publication
2001
Pages
833 - 837
Database
ISI
SICI code
0370-1972(200104)224:3<833:RITIIQ>2.0.ZU;2-T
Abstract
We report on the emission of mid-infrared (MIR) radiation from InGaAs/AlGaA s quantum dots upon photoexcitation and electrical injection. Mid-infrared radiation is achieved from bipolar quantum-dot lasers during near infrared lasing. The MIR spectrum exhibits a peak at 16 mum and is dominantly TM pol arized. The MIR intensity exhibits a superlinear dependence on the injectio n. These results are compared to optically pumped emission from InGaAs/GaAs quantum dots. The unpolarized spectrum shows peaks at 15 and 10 mum The MI R intensity increases sublinearly with excitation power.