Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

Self-assembled InAs quantum dots (QDs) are fabricated in In0.03Ga0.97As0.99 N0.01 and In0.06Ga0.94As0.98N0.02 matrices on GaAs by solid source molecula r beam epitaxy The influence of InAs average layer thickness and matrix mat erial on photoluminescence properties are studied. We observe a photolumine scence peak wavelength up to 1.49 mum from structures with a nominal InAs t hickness of four monolayers (ML). For QD structures emitting at 1.3 mum, no saturation of ground state luminescence and no excited state photoluminesc ence are detected. This should lead to an improved performance of 1.3 mum q uantum dot lasers an GaAs.