Transport properties in doped Mott insulator epitaxial La1-xTiO3+delta thin films - art. no. 161103

Citation
S. Gariglio et al., Transport properties in doped Mott insulator epitaxial La1-xTiO3+delta thin films - art. no. 161103, PHYS REV B, 6316(16), 2001, pp. 1103
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6316
Issue
16
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010415)6316:16<1103:TPIDMI>2.0.ZU;2-Q
Abstract
We report on the transport properties, Hall effect and resistivity, of epit axial La1-yTiO3+delta thin films. The materials, grown by molecular beam ep itaxy, display a temperature independent Hall coefficient and a characteris tic T-2 dependence of the resistivity over a wide temperature range, extend ing from a few Kelvin to 500 K. These transport properties are shown to be consistent with small polaron metallic conduction with a dominant optical p honon mode whose energy, (h) over bar omega (0) = 80 K, is characteristic o f the tilt/rotation of the oxygen octahedra in perovskite materials.