Scaling of band-gap reduction in heavily nitrogen doped GaAs - art. no. 161303

The band-gap reduction caused by heavy impurity doping in a semiconductor c an be written as deltaE(g)(x) proportional tox(alpha), where x is the mole fraction of the impurities, and alpha is the scaling exponent. It is well k nown that a = 1/3 for n- or p-type (i.e., charged) doping, where the isolat ed impurity center forms bound states. In contrast, the incorporation of is oelectronic impurities into a semiconductor commonly results in alloy forma tion. In this case, the impurities do not form any bound states (with small cluster sizes), and one finds that alpha = 1. However, for the case of nit rogen doping in GaAs, although isolated nitrogen impurities do not form bou nd states, nitrogen impurity pairs do, and we find alpha = 2/3. The scaling rule revealed here demonstrates that the dominant mechanism fur the large band-gap reduction observed in GaAs1-xNx is the formation of an impurity ba nd associated with nitrogen pair bound states.