Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots - art. no. 161309

Exciton-longitudinal optic-phonon coupling in InAs/GaAs quantum dots is inv estigated by means of single-dot spectroscopy. Photoluminescence spectra in the excitonic ground-state region exhibit a series of new emission lines w hich we ascribe to single exciton recombination perturbed by charged defect s close to the dot. Compared to unperturbed excitonic recombination, the re sulting dipole in these complexes leads to enhanced coupling to LO phonons in photoluminescence excitation spectra. Evidence for resonant enhancement of phonon-assisted processes ill absorption is also presented.