Electrical transport in doped multiwalled carbon nanotubes - art. no. 161404

Citation
K. Liu et al., Electrical transport in doped multiwalled carbon nanotubes - art. no. 161404, PHYS REV B, 6316(16), 2001, pp. 1404
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6316
Issue
16
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010415)6316:16<1404:ETIDMC>2.0.ZU;2-6
Abstract
The effects of doping, electron coherence, and electron correlation on the transport properties of boron-doped multiwalled carbon nanotubes are studie d. Substitutional boron lowers the Fermi level of the tubes and increases t he number of participating conduction channels without introducing strong c arrier scattering. From 300 to about 50 K, the tubes show metallic behavior with weak electron-phonon coupling. At lower temperatures the resistance i ncreases, and a zero-bias anomaly is observed. The magnetoresistance is now negative indicating the importance of coherent back-scattering processes. The coherence lengths are measured and dephasing is found to involve weakly inelastic electron-electron collisions. The temperature dependence of the resistance as well as the other low temperature observations can be account ed for by one-dimensional weak-localization theory.