Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307

Citation
Ya. Pusep et al., Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307, PHYS REV B, 6316(16), 2001, pp. 5307
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6316
Issue
16
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010415)6316:16<5307:VLMOSS>2.0.ZU;2-J
Abstract
Vertical longitudinal magnetoresistance (VLMR) caused by the peculiar shape of the Fermi surface of a superlattice has been observed in GaAs/AlxGa1-xA s superlattices. This VLMR occurs when the electrons occupy the open Fermi surface and their motion in the plane of the layers is quantized by a magne tic field. It was shown that there exists a critical magnetic field that ca ncels the contribution of the electrons occupying the open Fermi surface to the vertical conductivity in the case when the chemical potential exceeds the width of the miniband, thus resulting in the observed VLMR. This effect produces the conditions necessary to observe the quantized Hall effect in the three-dimensional electron system of a superlattice.