We conducted theoretical investigation into the effect of spontaneous elect
ron spin polarization in single and coupled quantum dots formed by lateral
confinement of a high-mobility two-dimensional electron gas in a semiconduc
tor heterostructure. The equilibrium properties of realistic many-electron
quantum-dot devices are first studied within the two-dimensional Thomas-Fer
mi approximation taking into account contributions from the patterned gate,
doping, surface states, and mirror charges. In order to explore spin-depen
dent phenomena, a self-consistent model has been developed using the Kohn-S
ham local spin-density formalism. We have tested the contribution of electr
on correlation in the systems considered and found that it plays a minor ro
le, hence only exchange interactions are included in the model. We investig
ate the possibilities of manipulating the magnetization (spin polarization)
of single and double quantum dots by means of their mutual coupling and sy
mmetry breaking caused by variations in the geometry of the gate.