The surface structures of phosphorus on a Ge(111)c(2 x 8) surface have been
investigated by scanning tunneling microscopy (STM), low-energy electron d
iffraction, and Auger electron spectroscopy. Phosphorus adatoms are stable
on the Ge(111) surface up to similar to 350 degreesC, where desorption and/
or diffusion into the bulk sets in. The P adatoms cluster into small island
s and form a local (root3 x root3)R30 degrees structure. The stable bonding
configuration of phosphorus on Ge(lll) between room temperature and simila
r to 260 degreesC is the so-called T-4 trimer geometry, where the P adatoms
form triangular trimer units above second-layer Ge atoms, thus saturating
all the Ge surface dangling bonds in the local (root3 x root3)R30 degrees a
rray. However, only poor long-range order is obtained. The P-3 trimers repl
ace the Ce adatoms of the c(2 x 8) reconstruction as revealed in atomically
resolved STM images. The P trimer structure on Ge(lll) is discussed in rel
ation to the substitutional adsorption geometry of P on Si(111), and it is
argued that the Ge(111)(root3 x root3)R30 degrees -P-3 structure is the res
ult of the larger tensile stress on the Ge surface and the weaker Ge-P bond
strength as compared to the Si case.