Electronic structure and vertical transport in random dimer GaAs-AlxGa1-xAs superlattices - art. no. 165321

We report a systematic study of several GaAs-AlxGa1-xAs semiconductor super lattices grown by molecular-beam epitaxy specifically designed to explore t he existence of extended states in random dimer superlattices. We have conf irmed our previous results [V. Bellani et al., Phys. Rev. Lett. 82, 2159 (1 999)] with much additional evidence that allows us to lay claim to a clear- cut experimental verification of the presence of extended states in random dimer superlattices due to the short-range correlations (dimers) that inhib it the localization effects of the disorder.