Giant tunability of exciton photoluminescence emission in antiferromagnetic EuTe - art. no. 165323

The photoluminescence properties of antiferromagnetic EuTe layers grown by molecular-beam epitaxy are reported. At low temperatures, two excitonic pho toluminescence peaks are observed at 1.92 and 1.88 eV with a full width at half maximum of about 10 meV. With applied magnetic field, these excitonic transitions shift linearly by -34 meV/T to smaller transition energies with a total shift of more than 240 meV at 7.2 T. This is the largest tuning ra nge observed in any semiconductor. The observed magnetic field and temperat ure dependence of the luminescence lines is explained by the formation of l arge magnetic polarons due to exchange interactions between the d-like elec trons in the conduction band and localized 4f spins.