Determination of buried dislocation structures by scanning tunneling microscopy - art. no. 165431

Using scanning tunneling microscopy on Cu/Ru(0001) thin films we have locat ed the depth at which the cores of misfit dislocations lie below the film s urface. The procedure is based on matching areas with unknown structure to areas with a known stacking sequence in the same film. Our results show tha t dislocations occur not only at the Cu/Ru interface, but also at various l evels within the Cu films. Our analysis method should be applicable to the characterization of dislocation structures in other ultrathin film systems.