Local stress measurements in packaging by Raman spectroscopy

Citation
J. Chen et al., Local stress measurements in packaging by Raman spectroscopy, PROCEEDINGS OF 3RD ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, 2000, pp. 159-162
Citations number
4
Categorie Soggetti
Current Book Contents
Year of publication
2000
Pages
159 - 162
Database
ISI
SICI code
Abstract
This paper discusses the application of micro-Raman spectroscopy to measure mechanical stress in microelectronics packages. Examples are given for loc al stress induced in the silicon chip by solder bumps, stress induced in th e chip by bonding to a Cu substrate, and stress induced during thinning of wafers by polishing. Both 1-dimensional and 2-dimensional results from stre ss measurements are shown. It is demonstrated that micro-Raman spectroscopy is a very useful tool for the study of packaging induced local mechanical stress and offers a means for verification of finite element simulation res ults.