CRYSTAL-GROWTH OF SELECTED II-VI SEMICONDUCTING ALLOYS BY DIRECTIONALSOLIDIFICATION .1. GROUND-BASED EXPERIMENTS

Citation
Ch. Su et al., CRYSTAL-GROWTH OF SELECTED II-VI SEMICONDUCTING ALLOYS BY DIRECTIONALSOLIDIFICATION .1. GROUND-BASED EXPERIMENTS, Journal of Materials Science, 32(14), 1997, pp. 3765-3768
Citations number
24
Categorie Soggetti
Material Science
ISSN journal
00222461
Volume
32
Issue
14
Year of publication
1997
Pages
3765 - 3768
Database
ISI
SICI code
0022-2461(1997)32:14<3765:COSISA>2.0.ZU;2-E
Abstract
A series of Hg0.84Zn0.16Te crystal ingots have been grown from pseudob inary melts by the Bridgman-Stockbarger type directional solidificatio n using a Marshall Space Flight Center/Space Science Laboratory heat-p ipe furnace and the ground control experiment laboratory furnace of th e crystal growth furnace which was flown on the first United States Mi crogravity Mission. A number of translation rates and a series of hot- and cold-zone temperatures were employed to assess the influence of g rowth parameters on the crystal properties for the purpose of optimizi ng the in-flight growth conditions.