Ch. Su et al., CRYSTAL-GROWTH OF SELECTED II-VI SEMICONDUCTING ALLOYS BY DIRECTIONALSOLIDIFICATION .1. GROUND-BASED EXPERIMENTS, Journal of Materials Science, 32(14), 1997, pp. 3765-3768
A series of Hg0.84Zn0.16Te crystal ingots have been grown from pseudob
inary melts by the Bridgman-Stockbarger type directional solidificatio
n using a Marshall Space Flight Center/Space Science Laboratory heat-p
ipe furnace and the ground control experiment laboratory furnace of th
e crystal growth furnace which was flown on the first United States Mi
crogravity Mission. A number of translation rates and a series of hot-
and cold-zone temperatures were employed to assess the influence of g
rowth parameters on the crystal properties for the purpose of optimizi
ng the in-flight growth conditions.