RELAXATION-TIME FOR IONIZED IMPURITY SCATTERING IN COMPENSATED N-TYPEHG1-XCDXTE NEAR X=0.2

Authors
GIRAULT P BLANCHARD C GROSBRAS P BARBOT JF
Citation
P. Girault et al., RELAXATION-TIME FOR IONIZED IMPURITY SCATTERING IN COMPENSATED N-TYPEHG1-XCDXTE NEAR X=0.2, Journal of Materials Science, 32(14), 1997, pp. 3857-3861
Citations number
25
Categorie Soggetti
Material Science
Journal title
Journal of Materials Science → ACNP
ISSN journal
00222461
Volume
32
Issue
14
Year of publication
1997
Pages
3857 - 3861
Database
ISI
SICI code
0022-2461(1997)32:14<3857:RFIISI>2.0.ZU;2-C
Abstract
The electron relaxation time, tau(I) for ionized impurity scattering i n heavily compensated Hg1-xCdxTe (x similar to 0.2) is calculated. The Kane model of band structure is used. The tau(I) expression differs f rom that of Szymanska-Dietl because in heavily compensated materials t he Brooks-Herring scattering potential is not adapted. The relaxation time depends essentially on the pair correlation function between acce pters and donors. Acceptor and donor concentrations using the Szymansk a-Dietl model and our model have been determined for two samples.