BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum

Submonolayer cyclic epitaxy was used for the first time to obtain a bulk la yer of BeCdSe solid solution 100 nm thick with a Be content close to 46%, w hich corresponded to the composition lattice-matched to the GaAs substrate. In addition, low-temperature lasing at a wavelength of 460 nm with a thres hold power density of about 40 kW/cm(2) in a structure with multiple ZnSe/B eCdSe quantum wells was also attained for the first time. The band-bending parameter in the BeCdSe solid solutions was estimated at 4.5 eV. (C) 2001 M AIK "Nauka/Interperiodica".