Silicon network in a-Si : H films containing ordered inclusions

a-Si:H films with inclusions of (SiH2)(n) clusters or Si nanocrystals have been grown by magnetron-assisted SiH4 decomposition (dc-MASD). The films we re characterized by the microstructural parameter R = 0.7-1.0. Ultrasoft X- ray emission spectroscopy was applied to establish the effect of these incl usions on the increasing ordering of Si network. It is shown that, irrespec tive of the nature of the inclusions, their effect is strongest for films o f intrinsic material deposited at high temperatures (up to 400 degreesC). ( C) 2001 MAIK "Nauka/Interperiodica".