The effect of irradiation with carbon ions on the nanocluster structure of
diamond-like carbon films was studied. It is shown that the electronic prop
erties (optical absorption and electrical conductivity at low temperatures)
of the films depend heavily on the ion dose, which is a consequence of the
quantum confinement effect. Variations in the optical band gap and in the
activation energy for hopping conductivity are indicative of an increase in
the size of pi clusters whose concentration remains unchanged in the entir
e range of ion doses of 3 x 10(14)-1.2 x 10(17) cm(-2). The process of defe
ct production in the clusters is shifted to higher ion doses compared to th
at in structurally homogeneous materials. The optical absorption in the pi
clusters, their concentration in the samples, the tunneling parameters for
initial and completely "graphitized" films, and the width of the barrier la
yer between the clusters were estimated; the width of the band of defect st
ates was determined. It is shown that the known dependence of the optical b
and gap of the pi clusters on their size should be modified for large clust
ers (E-g less than or equal to 1 eV). (C) 2001 MAIK "Nauka/Interperiodica".