Light emitting diodes for the spectral range lambda=3.3-4.3 mu m fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20-180 degrees C (Part 2)

Light-emitting diodes (LEDs) based on p-n homo- and heterostructures with I nAsSb(P) and InGaAs active layers have been designed and studied. An emissi on power of 0.2 (lambda = 4.3 mum) to 1.33 mW (lambda = 3.3 mum) and a conv ersion efficiency of 30 (InAsSbP, lambda = 4.3 mum) to 340 mW/(A cm(2)) (In AsSb/InAsSbP double heterostructure (DH), lambda = 4.0 mum) have been achie ved. The conversion efficiency decreases with increasing current, mainly ow ing to the Joule heating of the p-n homojunctions. In DH LEDs, the fact tha t the output power tends to a constant value with increasing current is not associated with active region heating. On raising the temperature from 20 to 180 degreesC, the emission power of the (lambda = 3.3 and 4.3 mum) LEDs decreases, respectively, 7- and 14-fold, to become 50 (at 1.5 A) and 7 muW (at 3 A) at 180 degreesC. (C) 2001 MAIK "Nauka/Interperiodica".