Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

New dynamic electro-thermal models of the power MOSFET, and power bipolar d evices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothe rmal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the devic e and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.