Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Authors
Walkey, DJ Smy, TJ MacElwee, TW Maliepaard, M
Citation
Dj. Walkey et al., Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices, P IEEE SEM, 2001, pp. 228-232
Citations number
6
Categorie Soggetti
Current Book Contents
Journal title
SEVENTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2001 → ACNP
ISSN journal
10652221
Year of publication
2001
Pages
228 - 232
Database
ISI
SICI code
1065-2221(2001):<228:LMFTAP>2.0.ZU;2-P
Abstract
Linear models are derived for the dependence of thermal resistance on tempe rature dependent thermal conduct through backside temperature and self-heat ing. Applied to substrate devices, the model predictions are found to be w 5% of measurements for power levels to 3 mW/square m2 and a 165 degreesC su bstrate temperature range.