Blue to red electroluminescence from Au/native silicon oxide/p-Si structure subjected to rapid thermal annealing

Blue, green, yellow and red electroluminescence (EL) from the semitranspare nt Au/native silicon oxide (NSO)/p-Si structure was observed. The p-Si wafe rs with NSO films were subjected to rapid thermal annealing (RTA) at a seri es of temperatures between 600 and 1000 degreesC and then the semitranspare nt Au/NSO/p-Si structure was made. Under forward biases over 3 V, strong EL could be observed. The effect of RTA temperature on EL spectra of the semi transparent Au/NSO/p-Si structure was studied. It was found that with incre asing RTA temperature from 600 to 900 degreesC, wavelength of the main EL p eak varied between 460 and 680 nm and intensity of the main EL peak increas ed monotonously. (C) 2001 Elsevier Science B.V. All rights reserved.