Crystalline and ferroelectrical properties of heteroepitaxial (100) and (111) Pb(ZrxTi1-x)O-3 films on Ir/(100)(ZrO2)(1-x)(Y2O3)(x)/(100)Si structures

PZT films were deposited on the epitaxial Ir/(100)(ZrO2)(1-x)(Y2O3)(x)/(100 )Si structures by sputtering. On the epitaxial (100) and the (100) + (111) Ir films, the tetragonal (001) PZT films were heteroepitaxially grown with a cube-on-cube relationship. Also, on the epitaxial (111) Ir film, the tetr agonal (111) epitaxial PZT film was grown with quadruple domain. The crysta lline quality of the epitaxial (001) PZT film was much better than that of the epitaxial (111) PZT film. The leakage and P-E characteristics of the ep itaxial (001) PZT film on the (100) Ir film was superior to the (001) PZT f ilm on the (100)+(111) Ir film and to the (111) PZT film. (C) 2001 Elsevier Science B.V. All rights reserved.