Nanoscale STM detection of photocurrents in organic semiconductors

Citation
D. Fichou et al., Nanoscale STM detection of photocurrents in organic semiconductors, ADVAN MATER, 13(8), 2001, pp. 555
Citations number
20
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
13
Issue
8
Year of publication
2001
Database
ISI
SICI code
0935-9648(20010418)13:8<555:NSDOPI>2.0.ZU;2-M
Abstract
A nanosized junction based on a scanning tunneling microscope (see Figure) has been used to investigate the local through-space current-voltage and cu rrent-(tip-sample distance) characteristics of sexithiophene and pentacene. In addition to the fact that the materials behave as metal-insulator-semic onductor (MIS) tunnel junctions, their behavior under illumination is repor ted.