A summary is given of different methods for the determination of the energy
influx and its influence on the thermal balance and energetic conditions o
f substrate surfaces during plasma processing. The discussed mechanisms inc
lude heat radiation and kinetic and potential energy of charged particles a
nd sputtered neutrals. For a few examples such as magnetron sputtering of a
-C:H films, sputter deposition of aluminum on microparticles, and titanium
deposition in a hollow-cathode are evaporation device the energetic balance
of substrates during plasma processing is presented.