Spectroscopic in situ diagnostics of boron nitride film growth in plasma-enhanced deposition

The development of in situ diagnostics of the most important species and re actions in the plasma and/or on the surface during thin-film growth is one of the current topics in plasma-enhanced vapor deposition. In situ thin fil m diagnostic methods which could be used in plasma processing are restricte d due to the presence of electrons and ions. The advantages and disadvantag es of different applicable methods will be discussed. The spectroscopic in situ control of boron nitride film growth is presented as an example of sur face modification in low-temperature, low-pressure plasma processing. The g rowth of cubic and hexagonal boron nitride is observed by polarized infrare d reflection spectroscopy in absorption and ellipsometric configurations as well as by single-wavelength ellipsometry in the visible spectral range. M odeling of the experimental results gives detailed information on growth co nditions and internal stress of the films.