Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime

Authors
Hofmann, M Wagner, A Ellmers, C Schlichenmeier, C Schafer, S Hohnsdorf, F Koch, J Stolz, W Koch, SW Ruhle, WW Hader, J Moloney, JV O'Reilly, EP Borchert, B Egorov, AY Riechert, H
Citation
M. Hofmann et al., Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime, APPL PHYS L, 78(20), 2001, pp. 3009-3011
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
20
Year of publication
2001
Pages
3009 - 3011
Database
ISI
SICI code
0003-6951(20010514)78:20<3009:GSO(LD>2.0.ZU;2-7
Abstract
Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in t he 1.3-mum-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtaine d. Due to the contributions of a second confined subband, a spectrally broa d gain region is expected for (GaIn)(NAs)/GaAs at elevated carrier densitie s. (C) 2001 American Institute of Physics.