Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth

A relatively simple technique is demonstrated to fabricate three-dimensiona l face-centered-cubic infrared photonic crystals with submicron feature siz es using GaAs-based technology, single-step epitaxial growth, and lateral w et oxidation. The photonic crystals were fabricated with feature sizes (a) of 1.5 and 0.5 mum. Transmission measurements reveal a stopband centered at 1.0 mum with a maximum attenuation of 10 dB for the submicron (a = 0.5 mum ) photonic crystal. This technique is scalable to small photonic crystal pe riodicity and hence to shorter wavelengths. (C) 2001 American Institute of Physics.