Zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices

Citation
Ch. Chen et al., Zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices, APPL PHYS L, 78(20), 2001, pp. 3035-3037
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
20
Year of publication
2001
Pages
3035 - 3037
Database
ISI
SICI code
0003-6951(20010514)78:20<3035:ZEOOPI>2.0.ZU;2-5
Abstract
Optical properties of GaN/Al0.2Ga0.8N superlattices have been investigated by Raman scattering and photoluminescence measurements. It is found that th e A(1)(LO) phonon decreases in frequency with decreasing quantum-well width . The frequency shift is attributed to the effect of phonon zone folding. T hrough the study of photoluminescence, we show that our observation of the zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices is d ue to the sharpness of the interfaces between barrier and well layers. The sharp interfaces prevent the appearance of mixed interface modes which mask the phonon effect of zone folding in previous reports. (C) 2001 American I nstitute of Physics.