Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy

Recently, the addition of the isoelectronic surfactant Sb during organometa llic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results sug gest that surfactants added during growth could have profound affects on ot her important properties of semiconductors, such as doping. This letter pre sents the results of a recent study on the effects of the isoelectronic sur factant Sb on doping in GaAs. The addition of a small amount of triethylant imony during OMVPE of GaAs is found, using secondary ion mass spectroscopy analysis, to increase the Zn doping concentration from <6 x 10(18) atoms/cm (3) to 9 x 10(18) atoms/cm(3), a factor of 1.6. The amount of antimony intr oduced into the solid is only 2-3 x 10(17) atoms/cm(3). The addition of Sb also increases the impurity concentration of In in GaAs, but does not affec t the concentration of Te or P. (C) 2001 American Institute of Physics.