Wetting layer carrier dynamics in InAs/InP quantum dots

The electronic coupling between InAs/InP quantum dot (QD) array and its wet ting layer (WL) is studied by continuous wave and time resolved photolumine scence. The carrier dynamics is explained by the existence of two regimes i n the WL: at low QD density the carrier dynamics is dominated by the diffus ion and at high density when the distance between QDs is comparable to the carrier mean free path in the WL the quantum capture into QDs dominates. Fr om the identification of these two regimes the carrier mean free path in th e WL is estimated to about 30 nm. (C) 2001 American Institute of Physics.