Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots

Data are presented on the Fermi level influence on interdiffusion in self-o rganized quantum dots. Modulation doping is used to place either electrons or holes in the quantum dots' zero-dimensional levels. The ground state emi ssion energy and discrete level energy separations show that p-type modulat ion doping enhances the interdiffusion of the quantum dot material with its surrounding barriers, while n-type doping inhibits the interdiffusion. The results are consistent with the interdiffusion proceeding through intersti tial crystal defects. (C) 2001 American Institute of Physics.